| PART |
Description |
Maker |
| AT28BV64B09 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| AT28BV64B06 AT28BV64B-20TU AT28BV64B-20JU AT28BV64 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| CY7C287-55WC CY7C287-45JI |
64K x 8 Reprogrammable Registered PROM 64K X 8 UVPROM, 20 ns, CDIP28
64K X 8 OTPROM, 15 ns, PQCC32
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| IDT71V016 IDT71V016SA IDT71V016SA10BF8 IDT71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PBGA48
High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, PLASTIC, SOJ-44
TOOLS,SCREWDRIVERS,TORX,BALLDRIVER T-HANDLE SET,10-PC.INCH SIZES 3/32-3/8" AND STAND,HAND TOOLS,BALLDRIVER® T-HANDLE SETS ,BONDHUS
3.3V 64K x 16 Static RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100
0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
(CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
